Semiconductor Engineering

N7 FinFET Self-Aligned Quadruple Patterning Modeling

In this paper, we model fin pitch walk based on a process flow simulation using the Coventor SEMulator3D virtual platform. A taper angle of the fin core is introduced into the model to provide good ...
Semiconductor Engineering

How FinFET Device Performance Is Affected By Epitaxial Process Variations

As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...
Nasdaq

TSMC Certifies Synopsys' Digital and Custom Design Platforms on TSMC 5nm FinFET Process Technology

IC Compiler II and Design Compiler Graphical provide a complete digital implementation flow delivering optimized power, performance, area, and full via pillar support StarRC, PrimeTime, NanoTime, and ...
EDN

Synopsys and UMC Collaborate to Accelerate Development of UMC’s 14-nm FinFET Process

First collaboration milestone speeds validation of IP and design correlation on UMC's 14-nm FinFET process Process qualification vehicle validates key process and IP test structures Tapeout helps ...
EDN

All you need to know about GAA chip manufacturing process

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...
New Electronics

Process changes point to cheaper, better finFETs

A start up has found a way to use traditional semiconductor processing techniques to make finFETs that it claims will perform better than those currently produced at Intel and TSMC. The devices can ...